Highlighted Publications

All Publications

Note 1: Asterisk (*) denotes corresponding author.
Note 2: Dagger (†) denotes equal contributions.

2024 

56. Y. Yu, I. Seo, M. Luo, K. Lu, B. Son, J. Tan, and D. Nam*, ‌‌“Tunable single-photon emitters in 2D materials," 

​Nanophotonics, Published Online (2024) [PDF]​

55. Y. Ma, Z. Pan, Y. Liu, K. Zhao, J. Xiao, D. Nam, T. Wei*, and X. Shi*, ‌‌“Spatio-temporal strain analysis and thermal transport modulation in plastically deformed InSe van der Waals crystals," 

Materials Today Energy, Published Online (2024) [PDF]

54. H. Joo†, J. Liu†, M. Chen†, D. Burt, B. Chomet, Y. Kim, X. Shi, K. Lu, L. Zhang, Z. Ikonic, Y. Sohn, C. Tan, D. Gacemi, A. Vasanelli, C. Sirtori*, Y. Todorov*, and D. Nam*, ‌‌“Actively tunable laser action in GeSn nanomechanical oscillators," 

​Nature Nanotechnology, Published Online (2024) [PDF]

Covered by the News & View in Nature Nanotechnology

Covered by Dong-A Ilbo, Nate News, BizN, E-Daily

2023 

53. H. Joo†, Y. Kim†, M. Chen, D. Burt, L. Zhang, B. Son, M. Luo, Z. Ikonic, C. Lee, Y. Cho, C. Tan, and D. Nam*, ‌‌“All-around HfO2 stressor for tensile strain in GeSn-on-insulator nanobeam lasers,” 

​Advanced Optical Materials 11, 2301115 (2023) [PDF]​

52. J. Tan†, X. Shi†, K. Lu, H. Joo, Y. Kim, M. Chen, L. Zhang, C. Tan, K. Lim, E. Quek, and D. Nam*, ‌‌“Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies,” 

Optics Letters 48, 4269-4271 (2023) [PDF] 

51. Y. Kim†, S. Assali†, H. Joo, S. Koelling, M. Chen, L. Luo, X. Shi, D. Burt, Z. Ikonic, D. Nam*, and O. Moutanabbir*, ‌‌“Short-wave infrared cavity resonances in a single GeSn nanowire,” 

Nature Communications 14, 4393 (2023) [PDF]

50. Q. Chen, Y. Jung, H. Zhou, S. Wu, X. Gong, Y. Huang, K. Lee, L. Zhang, D. Nam, J. Liu, J. Luo, W. Fan, and C. Tan, ‌‌“GeSn/Ge multiquantum-well vertical-cavity surface-emitting p-i-n structures and diode emitters on a 200 mm Ge-on-insulator platform," 

ACS Photonics 10, 1716-1725 (2023) [PDF]

49. K. Lu†, M. Luo†, W. Gao, Q. Wang,  H. Sun*, and D. Nam*, “Strong second-harmonic generation by sublattice polarization in non-uniformly strained monolayer graphene,” 

Nature Communications 14, 2580 (2023) [PDF] 

Covered by Pushing Frontiers

48. M. Atalla†, Y. Kim†, S. Assali, D. Burt, D. Nam*, and O. Moutanabbir*, ‌‌“Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power,” 

ACS Photonics 10, 1649-1653 (2023) [PDF]

47. Y. Kim†, H. Joo†, M. Chen, B. Son, D. Burt, X. Shi, L. Zhang, Z. Ikonic, C. Tan, and D. Nam*, ‌‌“High-precision wavelength tuning of GeSn nanobeam lasers via dynamically controlled strain engineering,” 

Advanced Science, 2207611 (2023) [PDF]

Selected for the Inside Back Cover & Covered by eeNews Europe, etc.

46. F. Wang, F. Hu, M. Dai, S. Zhu, F. Sun, R. Duan, C. Wang, J. Han, W. Deng, W. Chen, M. Ye, S. Han, B. Qiang, Y. Jin, Y. Chua, N. Chi, S. Yu, D. Nam, S. H. Chae, Z. Liu, and Q. Wang*, ‌‌“A two-dimensional mid-infrared optoelectronic retina enabling simultaneous perception and encoding,” 

Nature Communications 14, 1938 (2023) [PDF]

45. D. Burt†, L. Zhang†, Y. Jung, H. Joo, Y. Kim, M. Chen, B. Son, W. Fan, Z. Ikonic, C. Tan, and D. Nam*, ‌‌“Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain,” 

Optics Letters 48, 735-738 (2023) [PDF] 

2022 

44. B. Son, Y. Wang, M. Luo, K. Lu, Y. Kim, H. Joo, Y. Yi, C. Wang, Q. Wang, S. Chae*, and D. Nam*, ‌‌“Efficient avalanche photodiodes with a WSe2/MoS2 heterostructure via two-photon absorption,” 

Nano Letters 22, 9516-9522 (2022) [PDF]

43. K. Lu, Y. Wang, M. Luo, B. Son, Y. Yu, and D. Nam*, ‌‌“Ultrafast light emission at telecom wavelengths from a wafer-scale monolayer graphene enabled by Fabry-Perot interferences,” 

Optics Letters 47, 4668-4671 (2022) [PDF]

42. Y. Wang†, D. Burt†, K. Lu, and D. Nam*, ‌‌“Second-harmonic generation in germanium-on-insulator from visible to telecom wavelengths,” 

Applied Physics Letters 120, 242105 (2022) [PDF]

41. D. Burt†, H. Joo†, Y. Kim†, Y. Jung, M. Chen, M. Luo, S. Parluhutan, D. Kang, S. Assali, L. Zhang, B. Son, C. Tan, O. Moutanabbir, Z. Ikonic, Y. Huang, and D. Nam*, ‌‌“Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain,” 

Applied Physics Letters 120, 202103 (2022) [PDF]

‌Selected as an Editor's Pick

40. Y. Jung†, D. Burt†, L. Zhang, Y. Kim, H. Joo, M. Chen, S. Assali, O. Moutanabbir, C. Tan, and D. Nam*, ‌‌“Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density,” 

Photonics Research 10, 06001332 (2022) [PDF]

39. M. Luo†, H. Sun†, Z. Qi, K. Lu, M. Chen, D. Kang, Y. Kim, D. Burt, X. Yu, C. Wang, Y. Kim, H. Wang, Q. Wang, and D. Nam*, ‌‌“Triaxially strained suspended graphene for large-area pseudo-magnetic fields," 

Optics Letters 47, 2174-2177 (2022) [PDF] 

38. Y. Kim†, S. Assali†, D. Burt, Y. Jung, H. Joo, M. Chen, D. Kang,‌ Z. Ikonic, O. Moutanabbir* and D. Nam*, “Enhanced GeSn microdisk lasers directly released on Si," 

Advanced Optical Materials 9, 2101213 (2022) [PDF]

2021

37. H. Joo†, Y. Kim†, D. Burt, Y. Jung, L. Zhang, M. Chen, S. Parluhutan, D. Kang, C. Lee, S. Assali, O. Moutanabbir, Y. Cho, C. Tan, and D. Nam*, ‌“1D photonic crystal direct bandgap GeSn-on-insulator laser,” 

Applied Physics Letters 119, 201101 (2021) [PDF]

36. X. Gao†, H. Sun†, Q. Wang, and D. Nam*, ‌‌“Heterostrain‐enabled dynamically tunable moiré superlattice in twisted bilayer graphene,” 

Scientific Reports‌ 11, 21402 (2021) [PDF] 

35. B. Son, L. Zhang, Y. Jung, H. Zhou, D. Nam, C. Tan, “Systematic study on photoexcited carrier dynamics related to defects in GeSn films with low Sn content at room temperature,” 

​Semiconductor Science and Technology 36, 125018 (2021) [PDF]  ​

34. D. Burt†, H. Joo†, Y. Jung, Y. Kim, M. Chen, Y. Huang, and D. Nam*, ‌“Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks,” 

​Optics Express 28, 28959-28967 (2021) [PDF] ​

33. D. Kang†, H. Sun†, M. Luo†, K. Lu, M. Chen, Y. Kim, Y. Jung, X. Gao, S. Parluhutan, J. Ge, S. Koh, D. Giovanni, T. Sum, Q. Wang, H. Li, and D. Nam*, “Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene,” 

Nature Communications 12, 5087 (2021) [PDF] 

‌Covered by Optics & Photonics News (OPN), Dong-A Ilbo, etc.

32. C. Qimiao, W. Shaoteng, Z. Lin, Z. Hao, D. Burt, D. Nam, W. Fan, and C. Tan, “GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 1.55 μm optical communication bands,” 

Optics Letters 46, 3809-3812 (2021) [PDF] 

31. J. Ge†, B. Ding†, S. Hou†, M. Luo, D. Nam, H. Duan*, H. Gao*, Y. Lam*, and H. Li*, “Rapid fabrication of complex nanostructures using room-temperature ultrasonic nanoimprinting,” 

Nature Communications 12, 3146 (2021) [PDF] 

30. O. Moutanabbir*, S. Assali, X. Gong, E. O'Reilly, C. Broderick, B. Marzban, J. Witzens, W. Du, S. Yu, A. Chelnokov, D. Buca, and D. Nam, “Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors,” 

Applied Physics Letters 29, 118, 110502 (2021) [PDF]  

29. Y. Jung†, Y. Kim†, D. Burt, H. Joo, D. Kang, M. Luo, M. Chen, L. Zhang, C. Tan, and D. Nam*, “Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications,” 

Optics Express 29, 14174-14181 (2021) [PDF] 

28. H. Sun*, P. Sengupta*, D. Nam*, and B. Yang*, “Negative thermal Hall conductance in two-dimer Shastry-Sutherland model with π-flux Dirac triplon,” 

Physical Review B 103, L140404 (2021) [PDF] 

27. H. Sun, Z. Qi, Y. Kim, M. Luo, B. Yang, and D. Nam*, “Frequency-tunable terahertz graphene laser enabled by pseudomagnetic fields in strain-engineered graphene,” 

Optics Express 29, 1892-1902 (2021) [PDF] 

‌Covered by Optics & Photonics News 

2020

26. A. Dubrovkin*, B. Qiang, T. Salim, D. Nam, N. Zheludev*, and Q.Wang*, “Resonant nanostructures for highly confined and ultra-sensitive surface phonon polaritons,” 

Nature Communications 11, 1863 (2020) [PDF]  

25. Z. Song, W. Fan*, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band structure of strained Ge1-xSnx alloy: a full-zone 30-band k·p model,” 

IEEE Journal of Quantum Electronics 56, 7100208 (2020) [PDF] 

2019

24. H. Joo, M. Shin, H. Jung, H. Cha, D. Nam, and H. Kwon*, “Oxide thin-film transistor-based vertically stacked complementary inverter for logic and photo-sensor operations,” 

Materials 12, 3815 (2019) [PDF] 

23. Z. Song, W. Fan*, C. Tan, Q. Wang, D. Nam, Z. Hua, and G. Sun, “Band structure of Ge1-xSnx alloy: a full-zone 30-band k·p model,” 

New Journal of Physics 21, 073037 (2019) [PDF] 

2018

22. Z. Qi, H. Sun, M. Luo, Y. Jung, and D. Nam*, "Strained germanium nanowire optoelectronic devices for photonic-integrated circuits," 

Journal of Physics: Condensed Matter 30(33), 334004 (2018) [PDF] 

21. S. Gupta*, D. Nam, J. Vuckovic and K. Saraswat, "Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium," 

Physical Review B 97(15), 155127 (2018) [PDF] 

2017

20. S. Bao†, D. Kim†, C. Onwukaeme†, S. Gupta†, K. Saraswat, K. Lee, Y. Kim, D. Min, Y. Jung, H. Qiu, H. Wang, E. A. Fitzgerald, C. Tan* and D. Nam*, "Low-threshold optically pumped lasing in highly strained germanium nanowires," 

Nature Communications 8(1), 1845 (2017) [PDF] 
Covered by Laser Focus World, Channel NewsAsia, etc. 

~2016 (Before Joining NTU)

19. D. Sukhdeo†, Y. Kim†, K. Saraswat, B. Dutt and D. Nam*, “Theoretical modeling for the interaction of tin alloying with n-type doping and tensile strain for GeSn lasers,” 

IEEE Electron Device Letters 37(10), 1307-1310 (2016) [PDF] 

18. J. Baek, B. Ki, D. Kim, C. Lee, D. Nam, Y. Cho, and J. Oh*, “Phosphorus implantation into in-situ doped Ge-on-Si for high light-emitting efficiency,” 

Optical Materials Express 6(9), 2939-2946 (2016) [PDF] 

17. D. Sukhdeo†, Y. Kim†, S. Gupta, K. Saraswat, B. Dutt and D. Nam*, “Anomalous threshold reduction from uniaxial strain for a low-threshold Ge laser,” 

Optics Communications 379, 32-35 (2016) [PDF] 

16. J. Petykiewicz†, D. Nam†, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković* and K. Saraswat*, “Direct bandgap light emission from strained Ge nanowire coupled with high-Q optical cavities,” 

Nano Letters 16(4), 2168-2173 (2016) [PDF] 
Covered by Dong-A Ilbo, Digital Times, Newsis, Asia Today, etc.

15. D. Sukhdeo, S. Gupta, K. Saraswat, B. Dutt and D. Nam*, “Impact of minority carrier lifetime on the performance of strained Ge light sources,” 

Optics Communications 364, 233-237 (2016) [PDF] 

14. D. Sukhdeo, S. Gupta, K. Saraswat, B. Dutt and D. Nam*, “Ultimate limit of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser,” 

Japanese Journal of Applied Physics 55, 024301 (2016) [PDF]  

13. D. Sukhdeo, J. Petykiewicz, S. Gupta, D. Kim, S. Woo, Y. Kim, J. Vučković, K. Saraswat and D. Nam*, “Ge microdisk with lithographically-tunable strain using CMOS-compatible process,” 

Optics Express 23(26), 33249-33254 (2015) [PDF] 

12. D. Sukhdeo, D. Nam*, J. Kang, M. Brongersma and K. Saraswat, “Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics,” 

Optics Express 23(13), 16740-16749 (2015) [PDF] 

11. J. Nam*, F. Afshinmanesh, D. Nam, W. Jung, T. Kamins, M. Brongersma, and K. Saraswat, “Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon,” 

Optics Express 23(12), 15816-15823 (2015) [PDF] 

10. J. Nam, S. Alkis, D. Nam, F. Afshinmanesh, J. Shim, J. Park, M. Brongersma, A. Okyay, T. Kamins and K. Saraswat*, “Lateral overgrowth for monolithic integration of germanium-on-insulator on silicon,” 

Journal of Crystal Growth 416, 21-27 (2015) [PDF] 

9. D. Nam*, J. Kang, M. Brongersma and K. Saraswat, “Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence,” 

Optics Letters 39(21), 6205-6208 (2014) [PDF] 

8. D. Nam, D. Sukhdeo, S. Gupta, J. Kang, M. Brongersma and K. Saraswat, “Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser,” 

IEEE Journal of Selected Topics in Quantum Electronics 20(4), 1500107 (2014) [PDF] 

7. D. Sukhdeo, D. Nam*, J. Kang, M. Brongersma and K. Saraswat, “Direct bandgap germanium-on-silicon inferred from 5.7% uniaxial tensile strain,” 

Photonics Research 2(3), A8-A13 (2014) [PDF] 
Selected as #1 most cited paper during 2014-2015 & Awarded a Highly Cited Paper Certificate in 2019

6. B. Dutt, H. Lin, D. Sukhdeo, B. Vulovic, S. Gupta, D. Nam, K. Saraswat, and J. Harris, “Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser,” 

IEEE Journal of Selected Topics in Quantum Electronics 19(5), 1502706 (2013) [PDF] 

5. D. Nam, D. Sukhdeo, J. Kang, J. Petykiewicz, J. Lee, W. Jung, J. Vuckovic, M. Brongersma*, and K. Saraswat*, “Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles,” 

Nano Letters 13(7), 3118-3123 (2013) [PDF] 

4. B. Dutt*, D. Sukhdeo, D. Nam, B. Vulovic, Z. Yuan, and K. Saraswat, “Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping,” 

IEEE Photonics Journal 4(5), 2002-2009 (2012) [PDF] 

3. W. Jung, J. Park, A. Nainani, D. Nam, and K. Saraswat, “Fluorine passivation of vacancy defects in bulk Ge metal-oxide-semiconductor field effect transistor application,” 

Applied Physics Letters 101(7), 072104 (2012) [PDF] 

2. D. Nam, D. Sukhdeo, S. Cheng, K. Huang, A. Roy, M. Brongersma, Y. Nishi, and K. Saraswat, “Electroluminescence from strained Ge membranes and implications for an efficient Si-compatible laser,” 

Applied Physics Letters 100(13), 131112 (2012) [PDF] 

1. D. Nam*, D. Sukhdeo, A. Roy, K. Balram, S. Cheng, K. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller and K. Saraswat, “Strained germanium thin film membrane on silicon substrate for optoelectronics,” 

Optics Express 19(27), 25866-25872 (2011) [PDF] 

Patent

2. US Patent No.11,962,128: “Optical device and method of forming the same,” D. Nam, Y. Kim, Y. Jung, D. Burt, H. Joo, W. Fan, Issued Apr. 16, 2024

1. US Patent No.0,372,455: “Crossed nanobeam structure for a low-threshold germanium laser,” D. Nam, J. Petykiewicz, D. Sukhdeo, S. Gupta, J. Vuckovic, K. Saraswat, Issued Sept. 9, 2015